ECRプラズマ励起MOVPE法によるGaN単結晶膜の低温成長

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概要

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• A low-temperature-growth technique for GaN single crystal films has been developed using electron cyclotron resonance (ECR) plasma excitation. GaN films were grown on sapphire substrates utilizing reaction of trimethylgallium (TMGa) with highly activated nitrogen produced by ECR excitation of ammonia. Growth conditions to obtain single crystals were studied. Single crystal growth of Zn-doped films can be obtained. Zn-doped films exhibit a luminescence band peaking at 430550 nm. Surface morphologies of both undoped and Zn-doped films are very smooth.

• 日本真空協会の論文

著者

• 佐々木 徹

  NTT電気通信研究所

• 前佛 栄

  NTT電気通信研究所

関連論文

• ECRプラズマ励起MOVPE法によるGaN単結晶膜の低温成長

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