グロー放電スパッタによる薄膜生成量
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概要
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Thin films of Ta. Nb, Pt and Cu are prepared on glass substrates by the cathode sputtering method in an argon atmosphere. The sputtering is carried out at various discharge voltages V, discharge currents I, argon pressures p and electrode distances d for To, Nb and Pt, and various electrode constructions for Nb and Cu.<BR>The glow discharge characteristics can be expressed as <I>V</I>= <I>k</I><SUB>I</SUB><SUP>1/2</SUP>/p. The deposited amount by the glow discharge sputtering was found to be of the form <I>Q</I> = <I>A</I> (<I>p</I><SUP>2</SUP>/<I>k</I><SUP>2</SUP><I>d</I><SUP>0.7</SUP>) <I>V</I><SUP>m</SUP>, and <I>m</I>=2.5 in high voltage region and <I>m</I>=4 in low voltage region. The values of <I>Q</I><I>k</I><SUP>2</SUP>/<I>p</I><SUP>2</SUP> are almost constant for various electrode constructions at the same voltage.
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