高周波スパッタリングによるα-HgS薄膜の作製とその結晶構造

概要

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Films of α-HgS up to 3.5μm thick have been grown on glass substrates by rf-sputtering techniques. Dependence of film structure on substrate temperature, rf-power density and film thickness have been studied by reflection electron diffraction. At substrate temperatures below 80°C with rf-power densities ranging from 0.2 to 1.2 W/cm<SUP>2</SUP>, the deposited films were polycrystalline with a <1120> fiber texture of α-HgS and were yellow-orange color, highly transparent, good adherence and stable up to 280°C in atmosphere. At the substrate temperatures above 80°C, the deposited films were polycrystalline with < 111> and < 110 > fiber texture of β-HgS at lower and higher power densities, respectively. X-ray powder patterns revealed that the lattice constants of rf-sputtered α-HgS films were similar to those of ASTM data and had little influence on rf-power density and annealing.
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