GaSb蒸着膜の特性
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概要
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Some properties of Gallium Antimonide films evaporated on the slide glass for substrate temperature range between 100°C to 400°C by the flashing method have been investigated experimentally. And the thickness of samples was about 6000Å, and the evaporation speed about 130Å/min.<BR>X ray diffraction patterns of the samples showed the existence of Sb crystals up to 250°C300°C, Over 300°C the peaks for Sb crystals disappeared and the diffraction intensities of GaSb increased with substrate temperature. Between 350°C and 400°C the patterns corresponding to ones of bulk material was obtained.<BR>And the transmittance of films deposited below 250°C was not observed in infrared region. But above 300°C the discontinuity of transmittance started to appear in the range of 800850 mμ and the transmittance reached constant at about 1800 mμ neglecting the interference term.<BR>Electrical properties of the sample at 400°C showed that the impurity concentration and conductivity was 7. 73·10<SUP>18</SUP>/cm<SUP>3</SUP>and 120 Ω<SUP>-1</SUP> cm<SUP>-1</SUP> respectively at 300°K. Therefore the mobility was 114. 5 cm<SUP>2</SUP>/volt·sec.<BR>The sample annealed at 450°C for 2 hours in vacuum showed less Hall coefficient and less conductivity than not annealed film.
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