Effect of argon ion sputtering of surface on hydrogen permeation through vanadium.

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概要

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• In order to measure the hydrogen permeation rate through V with atomically cleaned surface, an Ar ion sputtering apparatus has been installed in the hydrogen permeability measuring system. The permeation rate of the initial specimen was found to be increased by about one order of magnitude after Ar ion sputtering of its upstream side surface. Repeating of such a sputter-cleaning was not so much effective in increasing the steady state permeation rate as the initial sputtering was, but it accelerated the transient response rate by a factor of 2 or 3. The transient response rate was also accelerated by the increase of hydrogen pressure, but this effect tended to be diminished by the sputter-cleaning of specimen surface. The surface impurity layer on the downstream side of specimen was also inferred to act as a diffusion barrier affecting the steady state permeation rate. The present value of activation energy for hydrogen permeation through V at temperatures below 873 K was the smallest one ever obtained, showing that the surface effect was minimized in the present study on account of the surface sputter-cleaning in addition to the ultra high vacuum system.

• 一般社団法人 日本原子力学会の論文

著者

• Kanno Masayoshi

  Department Of Applied Chemistry Tokyo Metropolitan University

• Yamawaki Michio

  Department of Nuclear Engineering, Faculty of Engineering, University of Tokyo

• YONEOKA Toshiaki

  Department of Nuclear Engineering, Faculty of Engineering, University of Tokyo

• NAMBA Takashi

  Department of Nuclear Engineering, Faculty of Engineering, University of Tokyo

• SHIDA Koji

  Research Center for Nuclear Science and Technology, University of Tokyo

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