Enhanced diffusion and compositional change in near surface layers of TiC under hydrogen ion bombardment.
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概要
- 論文の詳細を見る
The compositional change of the surface and near surface layer of TiC coating has been studied under 1 keV hydrogen ion bombardment at various target temperatures. Depth profiles near the surface were observed by Auger electron spectrometer combined with Ar ion etching. The carbon composition decreases by a factor of 1.3 at the TiC surface bombarded at room temperature, indicating preferential sputtering. The carbon composition increases exponentially to the bulk value with increasing depth from the surface. The thickness of the altered layer is about 5 nm, which is almost a half of the projected range. No carbon depletion, however, was observed at the target temperature of 700°C. The diffusion coefficient of carbon atoms in the altered layer, calculated from the steady-state depth profile at room temperature, is about 8×10<SUP>-18</SUP>cm<SUP>2</SUP>/s which indicates enhanced diffusion in this layer.
- 一般社団法人 日本原子力学会の論文
著者
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GOMAY Yoshio
Research & Development Center Toshiba Corp.
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GOMAY Yoshio
Research & Development Center, Toshiba Corp.
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SUKENOBU Satoru
Research & Development Center, Toshiba Corp.
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SUKENOBU Satoru
Research & Development Center, Toshiba Corp.
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- Enhanced diffusion and compositional change in near surface layers of TiC under hydrogen ion bombardment.