The Half-Column Type PIN Diode
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概要
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Diodes of "half-column structure" were investigated. "Half-column" type Ge (5cm<SUP>3</SUP>) and Si (3cm<SUP>3</SUP>) diodes were prepared by air drifting in water coolant. The capacitance of 10mm and 16mm drifted "half-column" diodes were found to be about 2 pF at 200 V. The FWHM with an E180F preamplifier was 10 keV at 1.33 MeV γ-energy at relatively low bias voltage (200 V). <BR>The techniques of preparation and the performance characteristics obtained with the "half-column" type diode are described.
- 一般社団法人 日本原子力学会の論文
著者
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KOYAMA Masaki
Atomic Energy Research Laboratory, Musashi Institute of Technology
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YUKI Makoto
Atomic Energy Research Laboratory, Musashi Institute of Technology