GaAs基板に成長させたZnSe薄膜の結晶性に及ぼすZnとSe分子線のイオン化の効果
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概要
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ZnSe films were grown on GaAs substrates using partially ionized Zn and Se beams, without heat treatment before growth. The ionization of Zn and Se beams was effective to remove the surface contamination. The quality of ZnSe films strongly depended on substrate bias. High-quality ZnSe films with smooth surfaces epitaxially grew on the substrate biased to -40V.
- 社団法人 粉体粉末冶金協会の論文