Description of Transfer and Deposition during PLD of Thin Ceramic Films
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概要
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Thin films of ceramic materials (Al<SUB>2</SUB>O<SUB>3</SUB>, ZrO<SUB>2</SUB>) for technical applications are deposited at different laser parameters (wavelength, fluence, mode of operation) and processing variables (processing gas pressure and composition, rf bias, distance target-substrate). The material transfer is studied by high-speed photography and emission spectroscopy as a function of laser parameters and processing variables. Time-resolved (0.01-10 μs after the beginning of the laser pulse) measurements of the geometry, dynamics, velocity of the vapour/plasma front (max. <I>v</I>=60000 m/s), composition, ionization state and electron-temperature (40000-140000 K) are obtained. The morphology, structure and composition of the films are investigated by SEM, XRD and EDX. The deposited films show a broad variety of different structures which correspond to sputtered films on heated substrates. The results are discussed in view of applications. The overall view of experimental results allows the description of the material transfer which is related to the properties of the films deposited.
著者
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Voss Anke
Lehrstuhl für Lasertechnik der Rheinisch-Westfalischen Technischen Hochschule Aachen
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Alunovic Mirka
Lehrstuhl für Lasertechnik der Rheinisch-Westfalischen Technischen Hochschule Aachen
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Kreutz Ernst
Lehrstuhl für Lasertechnik der Rheinisch-Westfalischen Technischen Hochschule Aachen
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Aden Mirko
Lehrstuhl für Lasertechnik der Rheinisch-Westfalischen Technischen Hochschule Aachen
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Sung Hildegard
Lehrstuhl für Lasertechnik der Rheinisch-Westfalischen Technischen Hochschule Aachen