High resolution and analytical electron microscopy study of Si3N4-Ni bonded interface.

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概要

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• A detailed characterization of the ceramic-metal interface was carried out for a Si3N4-Ni system bonded in vacuum at 1 273 K. High resolution electron microscopy and analytical electron microscopy were used in the characterization of the interface. Reaction products such as nickel silicides were not present at the interface. It was demonstrated that Si3N4 reacts with Ni in accordance with the solid-state reaction mechanism proposed in this study. The final reaction product is thought to be Ni with Si and N in solid solution.

• The Iron and Steel Institute of Japanの論文

著者

• Brito Manuel

  Graduate School, Nagaoka University of Technology.

• Hirotsu Yoshihiko

  Division of Mechanical Engineering, Nagaoka University of Technology

• Yokoyama Hiroyuki

  Graduate School, Nagaoka University of Technology.

• Mutoh Yoshiharu

  Division of Mechanical Engineering, Nagaoka University of Technology

関連論文

• High resolution and analytical electron microscopy study of Si3N4-Ni bonded interface.

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