Evaluation of layered TiS2-based thermoelectric elements fabricated by a centrifugal heating technique

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We have developed a centrifugal heating apparatus to fabricate layered TiS2-based thermoelectric elements, and evaluated their thermoelectric properties. We found that layered (SnS)1.2(TiS2)2 bulk elements with preferred crystallographic orientation can be produced within a quartz tube under a centrifugal acceleration of 1,000 g or higher and at a maximum temperature of 1,073 K or higher. With the increasing centrifugal acceleration from 1,000 to 8,000 g, the electrical conductivity of the produced specimen was almost doubled possibly because of the increased degree of crystal-axis orientation. For the specimens produced at 8,000 g, we estimated a maximum thermoelectric figure of merit, ZT, of approximately 0.2 (673 K). We have thus demonstrated that it is possible to use the centrifugal heating technique to fabricate layered TiS2-based thermoelectric elements directly from the powdered raw materials.