Wireless operations for 13.56-MHz band RFID tag using amorphous oxide TFTs

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概要

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• This paper presents an RFID chip for 13.56-MHz band communication fabricated on a glass substrate by using amorphous In-Ga-Zn-O thin-film transistors. Low driving-voltage logic circuits were achieved with a small Vth, a high field effect mobility of 15cm2/Vs and “active load” inverters that had small consumption currents. The RFID tag was successively driven by 13.56-MHz wireless input.

著者

• Ozaki Hiroaki

  Hitachi, Ltd., Central Research Laboratory

• Kawamura Tetsufumi

  Hitachi, Ltd., Central Research Laboratory

• Wakana Hironori

  Hitachi, Ltd., Central Research Laboratory

• Yamazoe Takanori

  Hitachi, Ltd., Central Research Laboratory

• Uchiyama Hiroyuki

  Hitachi, Ltd., Central Research Laboratory

関連論文

• Wireless operations for 13.56-MHz band RFID tag using amorphous oxide TFTs

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