Microstructure of Reaction-Bonded Silicon Carbide including Molybdenum Disiliside

概要

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Residual silicon in the reaction-bonded silicon carbide (RBSiC) can be replaced by refractory MoSi2 by using Si-Mo alloy as infiltrants instead of pure Si. Transmission electron microscopy of these materials clarified the following results. The MoSi2 existed in the SiC grain boundaries and many fine grains of SiC were found in the MoSi2 phase. The carbon particles were thought to be dissolved into the Si melt including Mo and reprecipitated as SiC particles in the solution-reprecipitation mechanism. The Mo concentration in the Si-Mo melt increased with the reprecipitation of SiC particles, and the MoSi2 was precipitated in the grain boundaries. The presence of the fine SiC particles in the MoSi2 phase suggests that the carbon have a fairly strong interaction with silicon in the melt and diffuse not as isolated atoms, but as C-Si pairs.
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