Optical and electrical properties of aluminum doped zinc oxide thin films at various doping concentrations

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概要

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• Aluminum (Al) doped zinc oxide (ZnO) thin films have been prepared using sol-gel spin-coating method at various doping concentrations. The thin films were characterized using UV-Vis-NIR spectrophotometer and current-voltage (I-V) measurement system for optical and electrical properties respectively. The results show all films exhibit low absorbance in visible and near infrared (NIR) region. The calculated Urbach energy indicated the defects in the thin films increase with doping concentrations. The electrical properties of Al doped ZnO thin films improved with Al doping as measured through I-V measurement system.

• 公益社団法人 日本セラミックス協会の論文

著者

• Rusop Mohamad

  Nano-scitech Centre Inst. Of Sci. Universiti Teknologi Mara

• MAMAT Mohamad

  Solar Cell Laboratory, Faculty of Electrical Engineering, Universiti Teknologi MARA

• SAHDAN Mohamad

  Solar Cell Laboratory, Faculty of Electrical Engineering, Universiti Teknologi MARA

• AMIZAM Suhaidah

  NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA

• RAFAIE Hartini

  NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA

• KHUSAIMI Zuraida

  NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA

• RUSOP Mohamad

  NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA

• Khusaimi Zuraida

  NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia

• Rusop Mohamad

  NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia

関連論文

• Performance of an ultraviolet photoconductive sensor using well-aligned aluminium-doped zinc-oxide nanorod arrays annealed in an air and oxygen environment (Special issue: Microprocesses and nanotechnology)
• Optical and electrical properties of aluminum doped zinc oxide thin films at various doping concentrations
• Thickness-Dependent Characteristics of Aluminium-Doped Zinc Oxide Nanorod-Array-Based, Ultraviolet Photoconductive Sensors (Special Issue : Microprocesses and Nanotechnology)
• Effects of Aluminium Doping and Electrode Distance on the Performance of Aligned Zinc Oxide Nanorod Array-Based Ultraviolet Photoconductive Sensors
• Controllable Growth of Vertically Aligned Aluminum-Doped Zinc Oxide Nanorod Arrays by Sonicated Sol--Gel Immersion Method depending on Precursor Solution Volumes
• Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

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