Electric properties of 0.2Pb(Mg1/3Nb2/3)O3–0.8Pb(Zr0.475Ti0.525)O3 thick film fabricated by electrophoresis deposition

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This study presents dielectric and piezoelectric properties of piezoelectric thick film processed by electrophoresis deposition method. 1 µm–200 µm-thick film were fabricated by electrophoresis depostion method. The dielectric constant and piezoelectric property of the piezoelectric film increased as the film become thicker. When electric field <3 kV/mm was applied, their dielectric and piezoelectric properties were changed with respect to their thickness. At electric field = 5 kV/mm their properties are constant regardless of their thickness. These changes can be explained by existence of many void defects to be inevitabley introduced in thick film fabrication process, which can be one of crucial causes of controlling ferrroelectric properties of thick films.