A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

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概要

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• A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter which is designed with nanoscale FED are 57.9% and 18.21% less than these factors in a comparable CMOS sub-threshold inverter. So the nanoscale FED scheme can provide better power efficiency than standard sub-threshold CMOS inverters.

著者

• Jazayeri Farzan

  Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of T

• Sammak Ahmad

  Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of T

• Forouzandeh Behjat

  Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of T

• Raissi Farshid

  Department of Electrical Engineering, K. N. Toosi University of Technology

関連論文

• A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode
• Low-power and high-performance Automatic Gain Control systems based on nanoscale Field Effect Diode and SOI-MOSFET

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