SIMS用新型Cs表面電離形イオン源の開発と応用
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概要
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The fundamental characteristics of a newly developed Cs surface ionization ion source are described. This Cs ion source has two main features. One of the features is the use of the chemically stable compound CsCl as the ion source material, which can be handled safely. Another feature is the utilization of electron bombardment to heat the prous tungsten ion emitter, which results in high ion current density.The angular ion intensity amounts to 104μA/sr at the ion emitter temperature of 1500°C. This value leads to the maximum sample ion current of 10 μA, when it is used as a primary gun of SIMS. The Cs ion current intensity is stabilized within ±0.6 % for 30min., by means of controlling heating power of the ion emitter.With this ion gun the SIMS depth profile of As is carried out with detection limit of -1013 atoms/cm3. From the spatial resolution of secondary electron image, the minimum beam diameter is estimated to be about 2 to 3 μm.
- 日本質量分析学会の論文