A Small Space Radiation Monitor Capable of Measuring Multiple ISD-VGS Values of MOSFET

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概要

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• A small space radiation monitor capable of taking measurements of gate voltages of MOSFET for various drain currents has been developed for flight experiments aboard satellites. Measuring multiple ISD-VGS values of MOSFET is expected to provide better understanding of the electronic response to ionizing radiation in space. In particular, separating the effects of oxide charge densities, interface charge densities, and temperatures is anticipated for the accurate determination of total ionizing dose. Description of the instrumentation for space-borne measurements is given, along with a summary of the anticipated results from this experiment.

著者

• SEON Jongho

  Satrec Initiative

• KIM Sung-Joon

  Satrec Initiative

• SUNG Baek-Il

  Satrec Initiative

• MARRI Salem

  Emirates Institute for Advanced Science and Technology

• LEE Sang-Hyun

  Satellite Technology Center, Korea Advanced Institute of Science and Technology

関連論文

• A Small Space Radiation Monitor Capable of Measuring Multiple I_-V_ Values of MOSFET
• A Small Space Radiation Monitor Capable of Measuring Multiple ISD-VGS Values of MOSFET

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