Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme

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概要

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• Stimulated Raman scattering in silicon waveguides are attractive for optical amplification/lasing due to high Raman coefficient and high optical pump intensity in the small waveguide core. In this paper, we investigate the effect of two-photon absorption and free-carrier absorption for continuous-wave light propagation in submicron size silicon wire waveguides. We also show that if the waveguide lengths and pump powers are optimized, the net continuous-wave Raman gain and thus lasing activities in such waveguides without any additional free carrier extraction schemes is possible.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Tsuchiya Masahiro

  NICT - National Institute of Information and Communications Technology

関連論文

• Theoretical analysis of continuous-wave Raman gain/lasing in silicon wire waveguides without carrier extraction scheme

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