A simple empirical model for calculating gain and excess noise in GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6)

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概要

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• In this paper, we present a simple empirical model for calculating gain and excess noise in heterojunction GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6), without going through the relatively complicated and time consuming Monte Carlo simulation, commonly used for such devices. In this model, we present a set of empirical formula which can predict a distribution function for ionization path length for a given electric field throughout multiplication region. To determine the optimized values of the adjustable parameters used in our empirical model, we train a back-propagation neural network. The results are in excellent agreement with those obtained by the random path length (RPL) technique.

著者

• Soroosh Mohammad

  Advanced Device Simulation Lab (ADSL), Electrical and Computer Engineering Department, Tarbiat Modar

• Moravvej-Farshi Mohammad

  Advanced Device Simulation Lab (ADSL), Electrical and Computer Engineering Department, Tarbiat Modar

• Saghafi Kamyar

  Electrical Engineering Department, Shahed University

関連論文

• A simple empirical model for calculating gain and excess noise in GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6)

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