Raman induced wavelength conversion in scaled Silicon waveguides

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概要

• 論文の詳細を見る

• Parametric Raman nonlinearities in Silicon waveguides is used to demonstrate wavelength conversion from Stokes to anti-Stokes channels. The effects of two photon absorption and free carrier nonlinear losses on the conversion process have also been analyzed. We find that scaling down the waveguide dimensions to submicron sizes is advantageous in terms of increasing the Raman nonlinearities and reducing the carrier lifetime and hence nonlinear absorption.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• JALALI Bahram

  Electrical Engineering Department at the University of California

• Jalali Bahram

  Electrical Engineering department, University of California Los Angeles

• Raghunathan Varun

  Electrical Engineering department, University of California Los Angeles

• Dimitropoulos Dimitris

  Electrical Engineering department, University of California Los Angeles

• Claps Ricardo

  Electrical Engineering department, University of California Los Angeles

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• Raman induced wavelength conversion in scaled Silicon waveguides

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