Preparation and Characterization of Solid Solutions of TiO_2 and Trirutile Type MSb_2O_6 (M=Cu, Zn, Mg, Co and Ni)

スポンサーリンク

概要

• 論文の詳細を見る

• The solid solution of trirutile-type MSb2O6 (M=Cu, Zn, Mg, Co and Ni) and TiO2 with the molar rates x=0.125, 0.25, 0.5 and 0.75 in (MSb2O6)x(TiO2)1-x was prepared by a solid state reaction. The results showed that the solid solutions were formed except for (MSb2O6)0.75(TiO2)0.25 (M=Mg and Co) and x=0.50 and 0.75 in (NiSb2O6)x(TiO2)1-x, and were crystallized in trirutile type structure. Diffuse reflectance spectroscopy measurement for their powders indicated that the energy bandgaps were approximately 2.1 eV for (CoSb2O6)x(TiO2)1-x (x=0.125, 0.25 and 0.5), and were approximately 2.6 and 2.4 eV for (NiSb2O6)x(TiO2)1-x (x=0.125 and 0.25) and (CuSb2O6)x(TiO2)1-x (x=0.125, 0.25, 0.5 and 0.75), respectively. The photocatalytic activity for visible light was observed in (CoSb2O6)x(TiO2)1-x and (CuSb2O6)x(TiO2)1-x.

• 社団法人粉体粉末冶金協会の論文
• 2007-07-15

著者

• Hatano Ken

  Dept. Of Materials Chemistry School Of High-technology For Human Welfare Tokai University

• Matsushita Hiroaki

  Dept. Of Material Science And Technology School And High-technology For Human Welfare

• Matsushita Hiroaki

  Dept. Of Information And Communication Technology School Of High-technology For Human Welfare Tokai

• Katsui Akinori

  Dept. Of Materials Chemistry School Of High-technology For Human Welfare Tokai University

• Katsui Akinori

  Dept. Of Material Science And Technology School And High-technology For Human Welfare Tokai Universi

関連論文

• Thermoelectric Properties of CuM_XAl_O_2(M=Mg, Sr, Ca, Ba, Zn and Cd)
• Cu_2-II-IV-S_4系多元化合物半導体の結晶作製と評価
• Thermal Analyses of CuInGeSe4 Quaternary Compound for Crystal Growth by Solution Method (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
• Costal Growth of Cu-3-Ge-Se4 Quaternary Compounds(3=Ga,In) by Vertical Bridgman Methods (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
• Cu_2-IV-VI_3, Cu_3-Sb-VI_4, Cu_2-Zn-IV-Se_4系化合物半導体の結晶作製と評価
• Cuベース多元化合物半導体の結晶成長と評価
• ゾルゲル合成CaMgSi_2O_6ゲルの結晶化過程に対する塩酸触媒濃度の影響
• ゾルゲル法によるCaTi_4(PO_4)_6多孔質結晶化ガラスの作製
• Effects of Hydrochloric Acid Catalyst Concentration on Crystallization of Sol-Gel Derived CaMaSi_2O_6Gels
• Preparation and Characterization of Sol-Gel Derived Li_xCoO_2 Ceramics
• Preparation and Characterization of Solid Solutions of TiO_2 and Trirutile Type MSb_2O_6 (M=Cu, Zn, Mg, Co and Ni)

もっと見る 閉じる

スポンサーリンク