分光エリプソメトリによるSiC半導体の酸化界面評価と酸化メカニズム解明＜研究成果報告＞
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We tried to elucidate the oxidizing interface structure of SiC semiconductor and its oxidation mechanism. First of all, we investigated the analysis method for deriving the thickness of interface layer and verified the validity of the method by analyzing the multi-angle measurement data. As a result of analysis for SiC-oxide interfaces using the analysis method, it is found that the photon energy dispersion of optical constants of the interface layer is similar to that for SiC, the real part of dielectric function is larger than that of SiC, and the imaginary part agrees with that of SiC. In addition, we examined the thickness dependence of optical constants of interface layer and found that the standing point in energy dispersion of the imaginary part of dielectric function shifted to the lower energy-side at 40 nm of oxide thickness. In addition to the observation of SiC-oxide interface, real-time measurements of oxide growth-rates of SiC at various oxidation temperatures were conducted using an in-situ spectroscopic ellipsometer. We tried to apply 'Si and C emission model', which is proposed as the SiC oxidation model by us, to the experimental growth-rate data. As a result, the Si and C emission model well reproduced the growth-rate at the entire oxide thickness region at all of the oxidation temperatures measured for both of (0001)Si-face and (000-1)C-face. Based on the knowledge on oxidizing interface layer and oxidation mechanism obtained from spectroscopic ellipsometry studies, we discuss the structure of interface layer and the formation mechanism of interface states.
- 埼玉大学工学部の論文
埼玉大学工学部 | 論文
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