Vapor Growth of SnO2 Single Crystals From SnI4 and their Growth Mechanisms
スポンサーリンク
概要
- 論文の詳細を見る
Vapor growth of SnO2 single crystals, belonging to rutile-type crystals, has tried by the reaction of SnI4 vapor with O2 gas or H2O vapor. SnO2 single crystals more easily crystallized by hydrolysis than by oxidation of SnI4 , and the optimum temperature range of the growth region was between 1200℃ and 1250℃ in the oxidation ane between 1100℃ and 1150℃ in the hydrolysis, respectively. From the detail observations of the characteristic crystals grown by the hydrolysis, it was made clear that the leaf-type elongated by the growth of the hydrolysis, it was made clear that the leaf-type elongated by the growth of <110> needles and thickened by the deposition and diffusion on the surfaces succeeded to the elongating growth, that the pyramid-type elongated and thickened by the two dimensional layer growth and that the plate-type thickened by the two dimensional layer growth. The leaf and pyramid-types tended to crystallize to an octahedron consisting of the {101} and {011} facets though their growth mechanisms were different.
- 長崎大学教育学部の論文
- 1981-02-28
著者
関連論文
- Hydrogen Permeation Through Nickel
- Vapor Growth of SnO2 Single Crystals From SnI4 and their Growth Mechanisms