太陽電池用四元化合物半導体薄膜の堆積

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概要

• 論文の詳細を見る

• Characteristics of quaternary stannite-type semiconductor thin films were investigated. These films were deposited on glass substrate by vacuum evaporation or by spray pyrolysis. A thermal treatment in H_2S flow was needed to obtain quaternary films. The optimum conditions for deposition and annealing were studied. Single phase stannite-type films with (112) orientation were obtained when the as-deposited films were annealed at 500℃ in H_2S atmosphere. The resistivity of the films were changed from 10^<-2>Ωcm to 10^3Ωcm with the change of the film composition.

• 長野工業高等専門学校の論文
• 1991-08-30

著者

• 中沢 達夫

  長野高専

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• 太陽電池用四元化合物半導体薄膜の堆積

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