Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence
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概要
- 論文の詳細を見る
The boron concentration dependence of the Si electronic structure of Si(100)2 × 1 surfaces were investigatedby angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shiftstoward lower binding energy as the boron concentration increases. The band dispersion was obtainedfrom fitting procedure, and it is found that the top of the valence band does not exceed the Fermi leveleven with a boron concentration 35 times larger than the critical concentration of the metal-insulatortransition.
- Elsevierの論文
- 2010-12-00
著者
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OKAZAKI Hiroyuki
The Graduate School of Natural Science and Technology, Okayama University
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Okazaki Hiroyuki
The Graduate School of Science and Technology, Okayama University, Okayama 700-8530, Japan
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