Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy
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We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF2/Fe3Si heterostructures on Si(111) substrates, by selected-area molecular beam epitaxy (MBE) using electron-beam (EB) lithography. Clear negative differential resistances (NDRs) were observed in the current–voltage (I–V) characteristics at room temperature (RT). The reproducibility of the I–V characteristics was greatly improved, and approximately 40% of the FM-RTDs showed clear NDRs at RT.
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