Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity
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概要
著者
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Kita Takashi
Department Of Electrical And Electronics Engineering Graduate School Of Engineering Kobe University
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Kita Takashi
Department Of Electrical And Electronics Engineering Kobe University
関連論文
- Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films
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- Saturation of Förster resonance energy transfer between two optically nonlinear cyanine dyes of small Stokes shift energies in polymer thin films
- Multidirectional Observation of Photoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum Dots
- Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity
- Dynamics of above-barrier state excitons in multi-stacked quantum dots
- Extremely uniform bound exciton states in nitrogen δ-doped GaAs studied by photoluminescence spectroscopy in external magnetic fields
- Observation of quantum beat oscillations and ultrafast relaxation of excitons confined in GaAs thin films by controlling probe laser pulses