Improved luminescence efficiency of InAs quantum dots grown on atomic terraced GaAs surface prepared with in-situ chemical etching
スポンサーリンク
概要
- 論文の詳細を見る
Observation of the enhanced luminescence efficiency of InAs quantum dots (QDs) grown on atomically controlled GaAs surfaces is reported. With the trisdimethylaminoarsenic (TDMAAs) in-situ surface etching process, formation of atomic steps and terraces on GaAs surfaces were clearly observed. InAs QDs grown on the processed GaAs surfaces showed the clear dependence of QDs size, density and optical characteristics on the surface properties, i.e., the increase of the QDs height and diameter the decrease of the QDs density. About 6-times enhancement of photoluminescence efficiency which has the peak around 1550-nm wavelength was observed by growing InAs QDs on atomically controlled GaAs surfaces. This is due to the migration enhancement of InAs during thegrowth the QDs. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Wiley-Blackwellの論文
Wiley-Blackwell | 論文
- Follicular dendritic cell sarcoma of small intestine with aberrant T-cell marker expression
- Gain-of-function mutations and copy number increases of Notch2 in diffuse large B-cell lymphoma
- Running Test of VVVF Inverter Type Railcar Using Lithium Ion Battery
- Inhibitory effects of epigallocatechin-3 gallate, a polyphenol in green tea, on tumor-associated endothelial cells and endothelial progenitor cells
- Palmitoylation of the sphingosine 1-phosphate receptor S1P1 is involved in its signaling functions and internalization