Methods to Horizontally Align Single-Walled Carbon Nanotubes on Amorphous Substrate
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Synthesis of horizontally-aligned single-walled carbon nanotube on amorphous silicon dioxide is an important goal for direct integration of carbon nanotubes into the current modern nanoelectronics. In this micro review, we will overview the methods done to achieve a horizontally aligned single-walled carbon nanotubes on amorphous SiO2 as well as present our recent works in which we modify the substrate to guide the nanotubes during growth. In addition, we present our nanotube-based field-effect transistor that was created using the aligned nanotubes directly grown on silicon substrate.
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