Hot-complex-mediated abstraction and desorption of D adatoms by H on Si(100)

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The collision-induced associative desorption (CID) and abstraction (ABS) of D adatoms by H have been studied on the Si(100) surfaces. D2 CID exhibits a feature common to that of a thermal desorption from a dideuteride phase. HD ABS proceeds along an apparently second-order kinetics rather than a first-order kinetics with respect to surface D coverages. The ABS cross section is about 6 ﾃ・sup>2, extremely large compared to the theoretical values. Both of the direct Eley-Rideal mechanism and the hot-atom mechanism are ruled out. A hot-complex-mediated reaction model is proposed for ABS and CID.