High speed crystallization of a-Si by lateral sweep annealing in steep temperature gradient
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概要
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The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).
- IEICE 電子情報通信学会の論文
- 1992-09-20
IEICE 電子情報通信学会 | 論文
- Special section on concurrent/real-time and hybrid systems: Theory and applications
- SC回路を用いた多値デ-タ伝送用ベ-スバンドLSI (システムのVLSI化手法特集)
- High speed crystallization of a-Si by lateral sweep annealing in steep temperature gradient