p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature
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概要
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Electroluminescence at an emission power of over 0.4 mW is achieved at an emission wavelength of 1.6 µm using a p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diode. This emission power is obtained at room temperature under current injection of 460 mA, corresponding to an external quantum efficiency of approximately 0.1%. Photoluminescence and time-resolved photoluminescence measurements for devices with different thicknesses of beta-FeSi2 indicate that radiative recombination rate increased as the thickness of the beta-FeSi2 active layer is increased.
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