p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature
スポンサーリンク
概要
- 論文の詳細を見る
Electroluminescence at an emission power of over 0.4 mW is achieved at an emission wavelength of 1.6 µm using a p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diode. This emission power is obtained at room temperature under current injection of 460 mA, corresponding to an external quantum efficiency of approximately 0.1%. Photoluminescence and time-resolved photoluminescence measurements for devices with different thicknesses of beta-FeSi2 indicate that radiative recombination rate increased as the thickness of the beta-FeSi2 active layer is increased.
論文 | ランダム
- IS-7 COMBINATION THERAPY with TUMOR RESECTION and RADIATION for the MAIN HEPATIC DUCT CARCINOMA.
- 検証(24)豊かな村の貧しい物語 農協・補助金に頼らないニッポン農業の胎動
- 検証 豊かな村の貧しい物語(23)農家に寄生する農協商法 不公正取引の疑いが濃厚
- 検証 豊かな村の貧しい物語(22)「国産」「無農薬」本当に安全か 消費者よ妄論に惑わされるな
- 検証(21)豊かな村の貧しい物語 「減反」「農家減らし」に既得権益のぶ厚い壁