プラナリゼーションCMPにおけるILD 用ならびにCu用スラリーに関する基礎的研究

概要

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With the growing miniaturization of wiring technology in ULSI devices, recently Cu / low-k wiring has been introduced, to which Damascine method, a derived from STI-CMP technology is applied . First,oxide films were polished with cerium oxide slurries of different crystallite sizes. Based on the results, for the comparison purpose, polishing was carried out using the slurries of mixed crystallite sizes. Second, sirica slurry that is known to produce excellent processing characteristics was used in this study to investigate the effects of the variables selected for this study, a statistical design was employed. Material removal rate as well as surface roughness ware examined in order to establish optimal particle size and concentration level of silica for Cu-CMP.
埼玉大学総合研究機構地域共同研究センター産学連携推進部門の論文