極低窒素濃度化合物半導体混晶におけるアイソエレクトロニックトラップによる発光に関する研究<研究成果報告>

概要

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We have studied the photoluminescence from isoelectonic traps in dilute GaAsN alloys. A number of sharp luminescence peaks due to nitrogen pairs and their phonon replicas were observed. The energy differences between the luminescence peaks and phonon replicas were 36 meV, which is in agreement with the energy of the longitudinal optical phonon at the Γ point . This indicates that the formation of isoelectronic traps is largely affected by the conduction band state at the Γ point in dilute GaAsN alloys. We have also investigated the temperature dependence of the photoluminescence related to isoelectronic traps. The energy shift of the luminescence peaks with increasing temperature is found to be almost the same as that of E0 gap of GaAs, also showing that the conduction band state at the Γ point significantly contributes to the formation of isoelectronic traps in dilute GaAsN alloys.
埼玉大学工学部の論文
2006-07-00