Epitaxial Growth of Full-Heusler Alloy Co2MnSi Thin Films on MgO-Buffered MgO Substrates
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Full-Heusler alloy Co₂MnSi (CMS) thin films were epitaxially grown on MgO-buffered MgO substrates through magnetron sputtering.The films were deposited at room temperature and subsequently annealed in situ at 600℃. X-ray pole figure measurements ofthe annealed films showed 111 peaks with fourfold symmetry, providing direct evidence that these films were epitaxial and crystallizedin the L2₁ structure. The annealed films had sufficiently flat surface morphologies with root-mean-square roughness of about 0.22 nmat a film thickness of 50 nm. The saturation magnetization of the annealed films was 4.5μ B/f.u. at 10 K, corresponding to about 90% ofthe Slater–Pauling value for CMS.
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