Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses

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概要

• 論文の詳細を見る

• We describe an experimental investigation of the generation and detection of picosecond acoustic-phononpulses in a thin slab of GaAs using ultrashort optical pulses. Comparison of the optical phase variation with asimple theory for ambipolar diffusion indicates that carrier diffusion has a significant effect on the shape of thephonon pulses generated. The phonon pulse duration is measured to be ;25 ps, four times longer than thatexpected from optical-absorption considerations alone, indicating that hot carriers penetrate more than 100 nminto the sample during the phonon pulse generation process.

• American Physical Societyの論文

著者

• Wright O.

  Division Of Applied Physics Graduate School Of Engineering Hokkaido University

• MATSUDA O.

  Division of Applied Physics, Graduate School of Engineering, Hokkaido University

• Matsuda O

  Division Of Applied Physics Graduate School Of Engineering Hokkaido University

• Gusev V

  Univ. Du Maine Le Mans Fra

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