Characterization of thermally stable Ir-Ta alloy thin films deposited by sputtering

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Ir-Ta alloy thin films were deposited on Si0_2/Si substrates by a magnetron sputtering system using pure Ar as sputtering gas. The lr/Ta composition ratio of the alloy films was varied by changing the number of Ta chips on an lr target. The crystal structure of the alloy films changed from fcc-Ir to lr_3Ta, α-(Ir,Ta), Ta_3Ir, and bcc-Ta with increasing Ta content. Post-deposition annealing of the alloy films was carried out in oxygen at temperatures from 300℃ to 800℃ for 1 hour. The alloy films with Ta contents of 10-50 at.％ indicated low electrical resistivities below 220 μΩcm and the low resistivities were remained after annealing up to 600℃.