半導体-液体接合型太陽電池の基礎的研究-2-n-Si-電解質溶液-Pt系の場合

概要

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The semiconductor-liquid junction solar cells using polycrystaline titanium oxide (n-type semiconductor) were previously reported by the authors. In this paper, the electrical properties of cells using n-Si are described with several different surface treatments. The initial etching in HF＋HNO_3 solution for 20 sec and in HF solution for 60 sec after baking at 1000℃ for 2 hr in air to dope boron from the surface of n-Si was the most preferable surface treatment for converting solar energy to electric energy. It was found that the boron thermally doped n-Si was very effective for surface stabilization, and that boron-doped and paradium-coated n-Si photoelectric-chemical cells had a high solar to electric power conversion efficiency of 4％. The evaporated Pd film was heat-treated at 400℃ for 1 hr under 2×10^<-5> Torr, and this treatment served to prolong the life time of the electrodes.
北見工業大学の論文
1986-03-00