Ti-SiO2系サ-メット薄膜抵抗の陽極酸化トリミングについて
スポンサーリンク
概要
- 論文の詳細を見る
The trimming of the resistance of thin film resistors has been carried out by cutting their size with mechanical cutter or laser beam. However, the cutting method generally introduces micro-cracking into the thin films. The cermet thin films consisting of Si0_2 and metal are deposited more thickl compared with metal thin film resistors, but are rather weak against mechanical and thermal shock. Therefore, we have investigated the trimming by changing the film thckiness by anodic oxidation for cermet thin film resistors. The Ti-Si0_2 cermet thin films were anodized for 30 minutes at several different anodizing voltages using filter papers, which were wetted with Dimethyl Sulfoxide-Phosphoric Acid （20％）solution, and sandwiched between the film and top cathode electrode. The films showed a wide resistance change by anodization, but the anodized film resistors were not so stable as expected. By an anodization with the voltage lower than 15 volts, the trimming of less than 5％ is possible and reproducible. The heat-treatment in air after anodization developed markedly the stability of resistance. The cermet thin films, heat-treated at 300℃ for 3 hrs. in air after anodization at 50 volts, showed fairly good stability and a resistance change of less than 1％ by a 1000-hour stability test at 125℃ in air. The films sputtered from a composite target with a 16％ SiO_2 area ratio provided the most stable cermet thin film resistors. It was found that the anodization－heat-treatment combination is the most valuable trimming method in order to realize the exact and stable Ti-SiO_2 cermet thin film resistors.
- 北見工業大学の論文
北見工業大学 | 論文
- 有機高分子膜ガス溶解度係数測定のための新規測定法の開発
- 通風乾燥工程中の食品内水分移動機構の解析
- 魚肉ソーセージの水分移動メカニズムの解析
- 魚肉ソ-セ-ジの水分移動メカニズムの解析
- 牛骨由来アパタイト粉末の調製と異種たんぱく質吸着特性によるキャラクタリゼーション