G030044 基板上のグラフェンの変形特性([G03004]材料力学部門一般セッション(4):解析的検討)

概要

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Graphene has attracted much attention because of its extraordinary electronic and mechanical properties. It is expected graphene will become a new electronic material replacing silicon. The methods of making graphene on substrates will be prospective ways to fabricate graphene for commercial uses. In the present study, the morphology of graphene made on a 6H-SiC substrate is investigated using the molecular-dynamics method. The substrate is assumed to be either Si-faced or C-faced. The sizes of the substrate and graphene are varied retaining the similarity in their plane. The orientation of graphene with respect to an uppermost atomic layer of a SiC substrate is rotationally changed. The morphological variation of graphene with the increase of the angle of rotation is tracked. The wave length of the out-of-plane deformation of graphene changes with the increase of the angle of rotation. The roughness and potential energy of graphene are also obtained as a function of the angle of rotation, whereas the height of graphene from the uppermost surface of the substrate is obtained as a function of the size of graphene. These results will be useful for searching the condition that graphene of high quality may be obtained.
一般社団法人日本機械学会の論文
2011-09-11