A GIDL-Current Model for Advanced MOSFET Technologies without Binning

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概要

• 論文の詳細を見る

• A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model parameters are introduced. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning of model parameters. The influence of the GIDL current is investigated with circuits, which are sensitive to the change of the stored charge due to the GIDL current.

• 一般社団法人情報処理学会の論文
• 2009-02-17

著者

• Norio Sadachika

  Hiroshima University

• Dondee Navarro

  Silvaco Japan Co., Ltd.

• Ryosuke Inagaki

  Waseda University | Semiconductor Technology Academic Research Center

• Yasuaki Inoue

  Waseda University

関連論文

• A GIDL-Current Model for Advanced MOSFET Technologies without Binning

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