27pPSA-4 Hole Subband Dispersion in Super Highly-Doped Vicinal Si(111)-Indium Measured by Angle-Resolved Photoelectron Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2011-03-03
著者
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Ayob Nur
Graduate School Of Materials Science Nara Institute Of Science & Technology (naist)
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Daimon H.
Starc
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Sakata T.
Graduate School Of Materials Science Nara Institute Of Science & Technology (naist)
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Tabata H.
Graduate School Of Materials Science Nara Institute Of Science & Technology (naist)
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Takeda S.
Graduate School of Materials Science, Nara Institute of Science & Technology (NAIST)
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Morita M.
Graduate School of Materials Science, Nara Institute of Science & Technology (NAIST)
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Matsuoka H.
STARC
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Yoshikawa M.
STARC
関連論文
- 23pPSA-3 Effect of Hydrofluoric Acid Treatment on Energy Separations of Hole Subbands in Super Highly-Doped Si(111)/Indium Measured by Angle-Resolved Photoemission Spectroscopy (ARPES)
- 27pPSA-4 Hole Subband Dispersion in Super Highly-Doped Vicinal Si(111)-Indium Measured by Angle-Resolved Photoelectron Spectroscopy