Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistors (シリコン材料・デバイス)
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概要
- 論文の詳細を見る
Pentacene based organic field-effect transistors (OFETs) with SiO_2 and HfO_2 gate insulators have been fabricated by thermal evaporation method, and the effects of gate insulator on the electrical properties of the pentacene based OFETs and microstructures of the pentacene films were investigated. It is found that the electrical properties of pentacene based OFETs change with the gate insulator and the thickness of pentacene layer. Pentacene based OFET with HfO_2 gate insulator and 20-nm thick pentacene layer shows the best electrical properties.
- 2010-10-14
著者
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Liao M.
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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Ishiwara H.
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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Ohmi S.
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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Ishiwara H.
Department Of Electronics And Applied Physics Tokyo Institute Of Technology:department Of Physics Di
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Liao M.
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ohmi S.
Department Of Electronics And Applied Physics Tokyo Institute Of Technology