Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers(Session 6A : TFTs and Sensors)

スポンサーリンク

概要

• 論文の詳細を見る

• In-Ga-Zn-O (IGZO) is a well-known high electron mobility, which has many advantages, such as higher drive current and faster device operating speed. More recently, it is attracting considerable attention for its possible application to thin-film transistors. In this paper, we demonstrate that Woo-Seok Cheong et al. IGZO TFTs was simulated by using the well-known physical model based on the exponential density of deep and tail states [1]. Both I_D-V_<DS> and I_D-V_<GS> curves of the TFTs are fairly well reproduced using the proposed model.

• 2010-06-23

著者

• KIM H.

  Division of Advanced Materials Engineering, Kongju National University

• Seong H.

  Division of Electrical and Electronics Engineering, Korea Maritime University

• Son J.

  Division of Electrical and Electronics Engineering, Korea Maritime University

• Kim W.

  Division of Electrical and Electronics Engineering, Korea Maritime University

• Cheong W.

  Transparent Display Team Electronics and Telecommunications Research Institute (ETRI)

• Jang N.

  Division of Electrical and Electronics Engineering, Korea Maritime University

• Kim H.

  Division Of Electrical And Electronics Engineering Korea Maritime University

• Kim H.

  Division Of Advanced Materials Engineering Kongju National University

• Kim W.

  Division Of Electrical And Electronics Engineering Korea Maritime University

• Son J.

  Division Of Electrical And Electronics Engineering Korea Maritime University

• Jang N.

  Division Of Electrical And Electronics Engineering Korea Maritime University

• Seong H.

  Division Of Electrical And Electronics Engineering Korea Maritime University

関連論文

• Densification of TiO2 nanopowders by magnetic pulsed compaction
• Densification of TiO_2 Nanopowders by Magnetic Pulsed Compaction
• Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers(Session 6A : TFTs and Sensors)
• Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers(Session 6A : TFTs and Sensors)
• Thermal and Flow Characteristics of Evaporating Capillary Pore Flows Ranging from 10-mm to 10-μm Diameter
• Productivity Comparison of Major Summer Forage crops in the Reclaimed Tidal Land
• Wide Range Parametric Study for the Pool Boiling of Nano-fluids with a Circular Plate Heater

スポンサーリンク