Characterization of Doped -Si and SiGe Quantum Well Using Near-Infrared Photomultiplier Tube
スポンサーリンク
概要
著者
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KAN H.
Central Research Laboratory, Hamamatsu Photonics K. K.
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Kan H
Central Research Laboratory Hamamatsu Photonics K.k.
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Niigaki M.
Central Research Laboratory Hamamatsu Photonics K.k.
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Furuta S.
Central Research Laboratory Hamamatsu Photonics K.k.
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Kuroyanagi K.
Central Research Laboratory, Hamamatsu Photonics K.K.
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Hirohata T.
Central Research Laboratory, Hamamatsu Photonics K.K.
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Hiruma T.
Central Research Laboratory, Hamamatsu Photonics K.K.
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Hirohata T.
Central Research Laboratory Hamamatsu Photonics K.k.
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Kuroyanagi K.
Central Research Laboratory Hamamatsu Photonics K.k.
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Kan H.
Central Research Laboratory, Hamamatsu Photonics K.K.
関連論文
- Design of a Thermally Compensated KTP Pockels Cell
- Characterization of Doped -Si and SiGe Quantum Well Using Near-Infrared Photomultiplier Tube
- Near Infrared Photomultiplier with Transfered Electron Photocathode
- Liquid Phase Epitaxial Growth of Multilayered InAs_1-ySb_y(y=0.33) on InAs Substrate and Its Mid-Infrared Device Applications