3302 インプロセス・ウェットエッチング計測制御技術の開発(OS3-3 生産システムの計測・制御・監視)

概要

論文の詳細を見る
We developed a method for in-situ monitoring of silicon thickness during wet chemical eching. The principle of the measuring is near infrared optical intereference caused by the reflection at both surface of the silicon diaphragm. Wide wave length variable Laser makes it possible to monitor absolute thickness of rough surfaced silicon. Using this system, we could automate etching process and increase productivity of micro electro mechanical sensors.
一般社団法人日本機械学会の論文
2008-07-03