21411 CMPと洗浄における表面ナノ欠陥の発生機構と対策(基調講演,CMP,OS.1 機械工学が支援する微細加工技術(半導体・MEMS・NEMS),学術講演)

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概要

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• CMP (Chemical Mechanical Polishing) and Cleaning processes are required to achieve both planarized and defect-free surfaces. Recently, nanodefects such as scratches, pits, projections, contaminants and surface roughness induced in CMP/Cleaning processes are becoming more critical. Scraches, pits and projections are caused by contaminants and large particles. Particulate defects are likely to occur when the particles and substrates in the liquid have the opposite zeta-potential. Surface roughness is caused by the lack of uniformity in chemical etching of CMP and cleaning. To minimize the nano-defects and surface roughness, it becomes very important to eliminate the contaminants and to control the reaction factors including ambient factors such as dissolved oxygen and light in processes.

• 2008-03-13

著者

• 森永 均

  フジミインコーポレーテッド

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• 21411 CMPと洗浄における表面ナノ欠陥の発生機構と対策(基調講演,CMP,OS.1 機械工学が支援する微細加工技術(半導体・MEMS・NEMS),学術講演)

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