Improved Design of Thermal-Via Structures and Circuit Parameters for Advanced Collector-Up HBTs as Miniature High-Power Amplifiers(Microwaves, Millimeter-Waves)

スポンサーリンク

概要

• 論文の詳細を見る

• An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.

• 社団法人電子情報通信学会の論文
• 2007-02-01

著者

• Lee Pei-hsuan

  Department Of Engineering Science National Cheng Kung University

• Tseng Hsien-cheng

  Department Of Electronic Engineering And Nanotechnology R & D Center Kun Shan University

• Chou Jung‐hua

  National Cheng Kung Univ. Twn

• Chou Jung-hua

  Department Of Engineering Science National Cheng Kung University

関連論文

• Advances in Selective Wet Etching for Nanoscale NiPt Salicide Fabrication
• Fabricating Super-hydrophobic Polydimethylsiloxane Surfaces by a Simple Filler-Dissolved Process
• Design and Implementation of a Novel Outdoor Road-Cleaning Robot
• Improved Design of Thermal-Via Structures and Circuit Parameters for Advanced Collector-Up HBTs as Miniature High-Power Amplifiers(Microwaves, Millimeter-Waves)
• On the hysteresis of vortex shedding in a periodically-varying flow

スポンサーリンク