A Bootstrapped Switch for nMOS Reversible Energy Recovery Logic for Low-Voltage Applications(Electronic Circuits)

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概要

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• In this paper, we describe a bootstrapped nMOS switch that is modified to reduce leakage current for nMOS reversible energy recovery logic (nRERL). Conventional bootstrapped switches are not suitable for nRERL because they have nonadiabatic loss due to leakage current that flows while boosted. Therefore, we lowered the gate voltage of the isolation transistor in each bootstrapped switch to reduce this leakage current. With detailed analysis and simulation, we determined the range of the bias voltage, in which the switches can transfer full-swing input signals. We implemented a simple 8-bit nRERL microprocessor into silicon and measured its energy consumption to confirm our analysis. For the supply voltage of 1.8V and the operating frequency of 880kHz, we found that the microprocessor consumed about 8.5pJ/cycle for 1.3V<V_<bias><1.6V, which was just about a half of its energy consumption when V_<bias>=1.7V.

• 社団法人電子情報通信学会の論文
• 2006-05-01

著者

• Chae Soo‐ik

  Seoul National Univ. Kor

• Chae Soo-ik

  System Design Group School Of Electrical Engineering Seoul National University

• KIM Seokkee

  System Design Group, School of Electrical Engineering, Seoul National University

• Kim Seokkee

  System Design Group School Of Electrical Engineering Seoul National University

関連論文

• A Bootstrapped Switch for nMOS Reversible Energy Recovery Logic for Low-Voltage Applications(Electronic Circuits)

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